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High voltage dielectric breakdown within a block of plexiglas

The breakdown voltage of an insulator is the minimum voltage that causes a portion of an insulator to become electrically conductive.

The breakdown voltage of a diode is the minimum reverse voltage to make the diode conduct in reverse. Some devices (such as TRIACs) also have a forward breakdown voltage.[1]

Contents

Solids [edit]

Breakdown voltage is a characteristic of an insulator that defines the maximum voltage difference that can be applied across the material before the insulator collapses and conducts. In solid insulating materials, this usually creates a weakened path within the material by creating permanent molecular or physical changes by the sudden current. Within rarefied gases found in certain types of lamps, breakdown voltage is also sometimes called the "striking voltage".[2]

The breakdown voltage of a material is not a definite value because it is a form of failure and there is a statistical probability whether the material will fail at a given voltage. When a value is given it is usually the mean breakdown voltage of a large sample. Another term is also 'withstand voltage' where the probability of failure at a given voltage is so low it is considered, when designing insulation, that the material will not fail at this voltage.[3]

Two different breakdown voltage measurements of a material are the AC and impulse breakdown voltages. The AC voltage is the line frequency of the mains. The impulse breakdown voltage is simulating lightning strikes, and usually uses a 1.2 microsecond rise for the wave to reach 90% amplitude then drops back down to 50% amplitude after 50 microseconds.[4]

Two technical standards governing performing these tests are ASTM D1816 and ASTM D3300 published by ASTM.[5]

Gases and vacuum [edit]

In standard conditions at atmospheric pressure, gas serves as an excellent insulator, requiring the application of a significant voltage before breaking down (e.g. lightning). In partial vacuum, this breakdown potential may decrease to an extent that two uninsulated surfaces with different potentials might induce the electrical breakdown of the surrounding gas. This has some useful applications in industry (e.g. the production of microprocessors) but in other situations may damage an apparatus, as breakdown is analogous to a short circuit.[6]

In a gas, the breakdown voltage can be determined by Paschen's Law.

The breakdown voltage in a partial vacuum is represented as[7][8]

[9]


V_\mathrm{b} = \frac {Bpd}{\ln Apd - \ln(\ln(1 + \frac {1}{\gamma_\mathrm{se} }))}

where V_\mathrm{b} is the breakdown potential in volts DC, A and B are constants that depend on the surrounding gas, p represents the pressure of the surrounding gas,  d represents the distance in centimetres between the electrodes, and  \gamma_\mathrm{se} represents the Secondary Electron Emission Coefficient.[10] bu

A detailed derivation and some background information is given in the article about Paschen's law.

Diodes and other semiconductors [edit]

Diode I-V diagram

Breakdown voltage is a parameter of a diode that defines the largest reverse voltage that can be applied without causing an exponential increase in the current in the diode. As long as the current is limited, exceeding the breakdown voltage of a diode does no harm to the diode. In fact, Zener diodes are essentially just heavily doped normal diodes that exploit the breakdown voltage of a diode to provide regulation of voltage levels.

References [edit]

  1. ^ Emelyanov, A.A. and Emelyanova, E.A., Abstracts of Papers, Proc. XXII ISDEIV, Matsue, 2006, vol. 1, p. 37.
  2. ^ J. M. Meek and J. D. Craggs, Electrical Breakdown of Gases, John Wiley & Sons, Chichester, 1978.
  3. ^ Relationship between Electrode Surface Roughness and Impulse Breakdown Voltage in Vacuum Gap of Cu and Cu-Cr Electrodes, Shinji Sato and Kenichi Koyama, Mitsubishi Electric Corporation, Advanced Technology R & D Center, 8-1-1 Tsukaguchi-Honmachi, Amagasaki-City, Hyogo 661-8661, Japan
  4. ^ Emelyanov, A.A., Izv. Vyssh. Uchebn. Zaved., Fiz., 1989, no. 4, p. 103.
  5. ^ Kalyatskii, I.I., Kassirov, G.M., and Smirnov, G.V., Prib. Tekh. Eksp., 1974, no. 4, p. 84.
  6. ^ Stefanov, L.S., Tekhnika vysokikh napryazhenii (High-Voltage Engineering), Leningrad: Energiya, 1967.
  7. ^ G. Cuttone, C. Marchetta, L. Torrisi, G. Della Mea, A. Quaranta, V. Rigato and S. Zandolin, Surface Treatment of HV Electrodes for Superconducting Cyclotron Beam Extraction, IEEE. Trans. DEI, Vol. 4, pp. 218<223, 1997.
  8. ^ H. Moscicka-Grzesiak, H. Gruszka and M. Stroinski, ‘‘Influence of Electrode Curvature on Predischarge Phenomena and Electric Strength at 50 Hz of a Vacuum
  9. ^ R. V. Latham, High Voltage Vacuum Insulation: Basic concepts and technological practice, Academic Press, London, 1995.
  10. ^ Yemelyanov, A.A., Kalyatskiy, I.I., Kassirov, G.M., and Smirnov, G.V., Abstracts of Papers, Proc. VII ISDEIV, Novosibirsk, 1976, p. 130.

See also [edit]


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Thu, 09 May 2013 06:10:02 -0700

He claims 70kV/mm breakdown voltage, where 2-3kV is sufficient for directly-powered mains use: “The standard entry-level 10µm thick coating is more than capable of 500V isolation.” The firm is planning two product ranges: Nanotherm, which has a copper ...

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Thu, 09 May 2013 13:12:12 -0700

... n-channel power MOSFET for hard switching topologies such as CCM PFC, TTF and solar boost. Typical applications include solar, server, telecom and UPS. The 650 V breakdown voltage also suits the C7 for applications requiring an extra safety margin.

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Although the RedRock switch requires 400 µN of closure force (versus 21 µN) and 45 µN for opening (versus 6 µN), it has vastly improved performance in a contact resistance of just 3 to 5 Ω (versus 500 to 1000 Ω) and a breakdown voltage of 200 V (versus ...
 
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Wed, 08 May 2013 22:41:19 -0700

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